Product Summary
The IRF140 is the key to the advanced line of International Rectifier of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The IRF140 transistor also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
Parametrics
IRF140 absolute maxing ratings: (1)ID@VGS=0V, TC=25℃ Continuous Drain Current: 28A; (2)ID@VGS=0V, TC=100℃ Continuous Drain Current: 20A; (3)IDM Pulsed Drain Current①: 112A; (4)PD@TC=25℃ Max. Power Dissipation: 125W; (5)Linear Derating Factor: 1.0W/℃; (6)VGS Gate-to-Source Voltage: ±20V; (7)EAS Single Pulse Avalanche Energy②: 250mJ; (8)IAR Avalanche Current①: 28A; (9)EAR Repetitive Avalanche Energy①: 12.5mJ; (10)dv/dt Peak Diode Recovery dv/dt③: 5.5V/ns; (11)TJ TSTG Operating Junction Storage Temperature Range: -55 to 150℃; (12)Lead Temperature: 300(0.063 in. (1.6mm) from case for 10s); (13)Weight: 11.5(typical)g.
Features
IRF140 features: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF140 |
Other |
Data Sheet |
Negotiable |
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IRF1404 |
International Rectifier |
MOSFET MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB |
Data Sheet |
Negotiable |
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IRF1404L |
MOSFET N-CH 40V 162A TO-262 |
Data Sheet |
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IRF1404LPBF |
International Rectifier |
MOSFET MOSFT 40V 162A 4mOhm 160nC |
Data Sheet |
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IRF1404PBF |
International Rectifier |
MOSFET MOSFT 40V 162A 4mOhm 160nC |
Data Sheet |
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IRF1404S |
MOSFET N-CH 40V 162A D2PAK |
Data Sheet |
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IRF1404SPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF1404STRL |
International Rectifier |
MOSFET N-CH 40V 162A D2PAK |
Data Sheet |
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