(Hong Kong)
Product Summary
The BFP640E6327 is a NPN Silicon Germanium RF Transistor.
Parametrics
BFP640E6327 absolute maximum ratings: (1)Collector-emitter voltage, VCEO: 4V at TA>0℃; 3.7V at TA≤0℃; (2)Collector-emitter voltage, VCES: 13V; (3)Collector-base voltage, VCBO: 13V; (4)Emitter-base voltage, VEBO: 1.2V; (5)Collector current, IC: 50 mA; (6)Base current, IB: 3mA; (7)Total power dissipation, TS ≤ 90℃, Ptot: 200 mW; (8)Junction temperature, Tj: 150℃; (9)Ambient temperature, TA: -65 to 150℃; (10)Storage temperature, Tstg: -65 to 150℃.
Features
BFP640E6327 features: (1)High gain low noise RF transistor; (2)Provides outstanding performance for a wide range of wireless applications; (3)Ideal for CDMA and WLAN applications; (4)Outstanding noise figure F = 0.65 dB at 1.8 GHz; Outstanding noise figure F = 1.2 dB at 6 GHz; (5)High maximum stable gain: Gms = 24 dB at 1.8 GHz; (6)Gold metallization for extra high reliability; (7)70 GHz fT-Silicon Germanium technology; (8)Pb-free (RoHS compliant) package1); (9)Qualified according AEC Q101.
Diagrams
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BFP640 |
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