Product Summary

The CPV364M4F is an IGBT SIP module.The CPV364M4F is more efficient than comparable bipolar transistor module, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package of the CPV364M4F is highly suited to motor drive applications and where space is at a premium.

Parametrics

CPV364M4F absolute maximum ratings: (1)VCES, Collector-to-Emitter Voltage: 600V; (2)IC@TC = 25℃, Continuous Collector Current, each IGBT: 27A; (3)IC@TC= 100℃, Continuous Collector Current, each IGBT: 15A; (4)ICM, Pulsed Collector Current: 80A; (5)ILM, Clamped Inductive Load Current: 80A; (6)IF@TC=100℃, CDiode Continuous Forward Current: 9.3A; (7)IFM, Diode Maximum Forward Current: 80A; (8)Vge, Gate-to-Emitter Voltage:±20V; (9)VISOL, isolation Voltage, any terminal to case, 1 minute: 2500VRMS; (10)PD@ TC= 25℃, Maximum Power Dissipation, each IGBT63: 63W; (11)pd@ TC= 100℃, CMaximum Power Dissipation, each IGBT2: 25W; (12)TJ, TSTG, Operating Junction and storage temprature range: -40 to +150℃; (13)Soldering Temperature, for 10 sec: 300℃(0.063 in. (1.6mm) from case).

Features

CPV364M4F features: (1)Fully isolated printed circuit board mount package; (2)Switching-loss rating includes all tail losses; (3)HEXFRED soft ultrafast diodes; (4)Optimized for medium operating (1 to 10 kHz).

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
CPV364M4F
CPV364M4F

IGBT SIP MODULE 600V 15A IMS-2
Data Sheet
Negotiable 
CPV364M4FPbF
CPV364M4FPbF
Other

Data Sheet
Negotiable