(Hong Kong)
Product Summary
The FDS6688 is a N-Channel MOSFET. It has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDS6688 has been optimized for low side synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Parametrics
FDS6688 absolute maxing ratings: (1)VDSS Drain-Source Voltage: 30V; (2)VGSS Gate-Source Voltage: ±16 V; (3)ID Drain Current – Continuous: 16A; Pulsed: 50A; (4)Power Dissipation for Single Operation: 2.5W/1.4W/1.2W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: -55 to +175℃.
Features
FDS6688 features: (1)16A, 30V. RDS(ON) = 6mΩ@ VGS = 10 V; RDS(ON) = 7mΩ@ VGS = 4.5 V; (2)Ultra-low gate charge (40 nC typical); (3)High performance trench technology for extremely low RDS(ON); (4)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDS6688 |
Fairchild Semiconductor |
MOSFET SO-8 |
Data Sheet |
Negotiable |
|
||||||||||||
|
FDS6688_Q |
Fairchild Semiconductor |
MOSFET SO-8 |
Data Sheet |
Negotiable |
|
||||||||||||
|
FDS6688AS |
Fairchild Semiconductor |
MOSFET 30V N-Channel PowerTrench |
Data Sheet |
|
|
||||||||||||
|
FDS6688S |
Fairchild Semiconductor |
MOSFET 30V N-Channel PT SyncFET |
Data Sheet |
Negotiable |
|
||||||||||||
