Product Summary

The IRF130 N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. The IRF130 is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Parametrics

IRF130 absolute maximum ratings: (1)Drain to Source Voltage: 100 V; (2)Drain to Gate Voltage (RGS = 20kΩ): 100 V; (3)Continuous Drain Current: ID, TC = 100℃: 9.9 A; (4)Pulsed Drain Current: 56 A; (5)Gate to Source Voltage: ±20 V; (6)Maximum Power Dissipation: 79 W; (7)Linear Derating Factor: 0.53 W/℃; (8)Single Pulse Avalanche Energy Rating: 50 mJ; (9)Operating and Storage Temperature: -55 to 175 ℃; (10)Maximum Temperature for Soldering: Leads at 0.063in (1.6mm) from Case for 10s: 300 ℃, Package Body for 10s, See Techbrief 334: 260 ℃.

Features

IRF130 features: (1)14A, 100V; (2)rDS(ON) = 0.160Ω; (3)Single Pulse Avalanche Energy Rated; (4)SOA is Power Dissipation Limited; (5)Nanosecond Switching Speeds; (6)Linear Transfer Characteristics; (7)High Input Impedance; (8)Related Literature: TB334 "Guidelines for Soldering Surface Mount Components to PC Boards".

Diagrams

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10-100: $0.94
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500-1000: $0.80
1000-2500: $0.77
2500-10000: $0.71
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