Product Summary
The MC331694 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand–held telephones such as GSM and PCS. This device provides negative voltages for full depletion of Enhanced MESFETs as well as a priority management system of drain switching, ensuring that the negative voltage is always present before turning on the Power Amplifier. Additional features include an idle mode input and a direct drive of the N–Channel drain switch transistor. The MC331694 is available in a 4.0 V version intended for control of the RF Power Amplifier in GSM, DCS1800 and PCS applications.
Parametrics
MC331694 absolute maximum ratings: (1)Power Supply Voltage VCC: 9.5 V; (2)Tx Power Control Input VTx: VCC V; (3)Idle Mode Input Vi: VCC V; (4)Sense Input VSense: -5.0 to 0 V; (5)Negative Generator Output Source Current ISS: 20 mA; (6)Charge Pump Capacitor Current Imax: 60 mA; (7)Diode Forward Current IFmax: 60 mA; (8)Gate Drive Output Current IGO: 5.0 mA; (9)Operating Ambient Temperature TA: –40 to +85 ℃; (10)Storage Temperature Range Tstg: –60 to +150 ℃.
Features
MC331694 features: (1)Negative Regulated Output for Full Depletion of GaAs MESFETs; (2)Drain Switch Priority Management Circuit; (3)CMOS Compatible Inputs; (4)Idle Mode Input (Standby Mode) for Very Low Current Consumption; (5)Output Signal Directly Drives N-channel FET; (6)Low Startup and Operating Current.
Diagrams
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