Product Summary

The G60N100BNTD is a Trench insulated gate bipolar transistor (IGBT) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. The G60N100BNTD is well suited for Induction Heating ( I-H ) applications.

Parametrics

G60N100BNTD absolute maximum ratings: (1)VCES, collector-emitter voltage: 1000V; (2)VGES, gate-emitter voltage: ±25V; (3)IC, collector current: 60A when Tc=25℃; 42A when Tc=100℃; (4)ICM, pulsed collector current: 120A; (5)IF, diode contimuous forward current at Tc=100℃: 15A; (6)PD, maximum power dissipation: 180W when Tc=25℃; 72W when Tc=100℃; (7)Tj, operating junction temperature: -55 to 150℃; (8)Tstg, storage temperature range: -55 to 150℃; (9)TL, maximum lead temp. for soldering purpose: 300℃.

Features

G60N100BNTD features: (1)High Speed Switching; (2)Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A; (3)High Input Impedance; (4)Built-in Fast Recovery Diode.

Diagrams

G60N100BNTD circuit