(Hong Kong)
Product Summary
The IXFH8N80 is a HiPerFET Power MOSFET. The applications of the IXFH8N80 include, DC-DC converters, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, AC motor control, Temperature and lighting controls.
Parametrics
IXFH8N80 absolute maximum ratings: (1)VDSS: 800 V at TJ = 25℃ to 150℃; (2)VDGR: 800 V at TJ = 25℃ to 150℃; RGS = 1 MW; (3)VGS: ±20 V; (4)VGSM: ±30 V; (5)ID25: 8 A at TC = 25℃; (6)IDM: 32 A at TC = 25℃, pulse width limited by TJM; (7)IAR: 8 A at TC = 25℃; (8)EAR: 18 mJ at TC = 25℃; (9)PD: 180 W at TC = 25℃; (10)TJ: -55 to +150 ℃; (11)TJM: 150 ℃; (12)Tstg: -55 to +150 ℃.
Features
IXFH8N80 features: (1)International standard packages; (2)Low RDS (on) HDMOSTM process; (3)Rugged polysilicon gate cell structure; (4)Unclamped Inductive Switching (UIS) rated; (5)Low package inductance - easy to drive and to protect; (6)Fast intrinsic Rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFH8N80 |
Ixys |
MOSFET 8 Amps 800V 1.1 Rds |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
IXFH 18N60P |
Other |
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Data Sheet |
Negotiable |
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IXFH 28N50F |
Other |
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Data Sheet |
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IXFH/IXFM42N20 |
Other |
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Data Sheet |
Negotiable |
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|
IXFH100N25P |
Ixys |
MOSFET 100 Amps 250V 0.027 Rds |
Data Sheet |
Negotiable |
|
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|
IXFH102N15T |
Ixys |
MOSFET 102 Amps 0V |
Data Sheet |
Negotiable |
|
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|
IXFH10N100 |
Ixys |
MOSFET 1KV 10A |
Data Sheet |
Negotiable |
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