Product Summary

The MJE181 is a complementary plastic silicon power transistor. The MJE181 is designed for low power audio amplifier and low current, high speed switching applications.

Parametrics

MJE181 maximum ratings: (1)Collector-Base Voltage, VCB: 80 Vdc; (2)Collector.Emitter Voltage, VCEO: 80 Vdc; (3)Operating and Storage Junction Temperature Range, TJ, Tstg: -65 to +150℃; (4)CEB: 60Vdc; (5)Ic: 3.0 Adc continuous; 6.0 Adc peak; (6)IB: 1.0 Adc.

Features

MJE181 features: (1)Collector-Emitter Sustaining Voltage, VCEO(sus): 60 Vdc ; (2)DC Current Gain, hFE = 30 (Min) @ IC = 0.5 Adc; hFE = 12 (Min) @ IC = 1.5 Adc; (3)Current-Gain - Bandwidth Product, fT = 50 MHz (Min) @ IC = 100 mAdc; (4)Annular Construction for Low Leakages, ICBO = 100 nA (Max) @ Rated VCB; (5)Epoxy Meets UL 94 V-0 @ 0.125 in; (6)ESD Ratings: Machine Model, C, Human Body Model, 3B; (7)Pb-Free Packages are Available.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MJE181
MJE181

ON Semiconductor

Transistors Bipolar (BJT) 3A 60V 12.5W NPN

Data Sheet

Negotiable 
MJE181G
MJE181G

ON Semiconductor

Transistors Bipolar (BJT) 3A 60V 12.5W NPN

Data Sheet

0-1: $0.32
1-25: $0.25
25-100: $0.21
100-500: $0.18
MJE181STU
MJE181STU

Fairchild Semiconductor

Transistors Bipolar (BJT) NPN Epitaxial Sil

Data Sheet

0-1: $0.16
1-25: $0.14
25-100: $0.13
100-250: $0.09