(Hong Kong)
Product Summary
The MJE181 is a complementary plastic silicon power transistor. The MJE181 is designed for low power audio amplifier and low current, high speed switching applications.
Parametrics
MJE181 maximum ratings: (1)Collector-Base Voltage, VCB: 80 Vdc; (2)Collector.Emitter Voltage, VCEO: 80 Vdc; (3)Operating and Storage Junction Temperature Range, TJ, Tstg: -65 to +150℃; (4)CEB: 60Vdc; (5)Ic: 3.0 Adc continuous; 6.0 Adc peak; (6)IB: 1.0 Adc.
Features
MJE181 features: (1)Collector-Emitter Sustaining Voltage, VCEO(sus): 60 Vdc ; (2)DC Current Gain, hFE = 30 (Min) @ IC = 0.5 Adc; hFE = 12 (Min) @ IC = 1.5 Adc; (3)Current-Gain - Bandwidth Product, fT = 50 MHz (Min) @ IC = 100 mAdc; (4)Annular Construction for Low Leakages, ICBO = 100 nA (Max) @ Rated VCB; (5)Epoxy Meets UL 94 V-0 @ 0.125 in; (6)ESD Ratings: Machine Model, C, Human Body Model, 3B; (7)Pb-Free Packages are Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MJE181 |
ON Semiconductor |
Transistors Bipolar (BJT) 3A 60V 12.5W NPN |
Data Sheet |
Negotiable |
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MJE181G |
ON Semiconductor |
Transistors Bipolar (BJT) 3A 60V 12.5W NPN |
Data Sheet |
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MJE181STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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