Product Summary

The MJE181 is a complementary plastic silicon power transistor. The MJE181 is designed for low power audio amplifier and low current, high speed switching applications.

Parametrics

MJE181 maximum ratings: (1)Collector-Base Voltage, VCB: 80 Vdc; (2)Collector.Emitter Voltage, VCEO: 80 Vdc; (3)Operating and Storage Junction Temperature Range, TJ, Tstg: -65 to +150℃; (4)CEB: 60Vdc; (5)Ic: 3.0 Adc continuous; 6.0 Adc peak; (6)IB: 1.0 Adc.

Features

MJE181 features: (1)Collector-Emitter Sustaining Voltage, VCEO(sus): 60 Vdc ; (2)DC Current Gain, hFE = 30 (Min) @ IC = 0.5 Adc; hFE = 12 (Min) @ IC = 1.5 Adc; (3)Current-Gain - Bandwidth Product, fT = 50 MHz (Min) @ IC = 100 mAdc; (4)Annular Construction for Low Leakages, ICBO = 100 nA (Max) @ Rated VCB; (5)Epoxy Meets UL 94 V-0 @ 0.125 in; (6)ESD Ratings: Machine Model, C, Human Body Model, 3B; (7)Pb-Free Packages are Available.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJE181G
MJE181G
ON Semiconductor
Transistors Bipolar (BJT) 3A 60V 12.5W NPN
Data Sheet
0-1: $0.32
1-25: $0.25
25-100: $0.21
100-500: $0.18
MJE181STU
MJE181STU
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Epitaxial Sil
Data Sheet
0-1: $0.16
1-25: $0.14
25-100: $0.13
100-250: $0.09
MJE181
MJE181
ON Semiconductor
Transistors Bipolar (BJT) 3A 60V 12.5W NPN
Data Sheet
Negotiable