Product Summary

The MDmesh STW26NM50 is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company PowerMESH. horizontal layout. The resulting product of the STW26NM50 has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition products.

Parametrics

STW26NM50 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 500 V; (2)VDGR Drain-gate Voltage (RGS = 20 kΩ): 500 V; (3)VGS Gate- source Voltage: ± 30 V; (4)ID Drain Current (continuous) at TC = 25℃: 30 A; (5)ID Drain Current (continuous) at TC = 100℃: 18.9 A; (6)IDM () Drain Current (pulsed): 120 A; (7)PTOT Total Dissipation at TC = 25℃: 313 W; (8)Derating Factor: 2.5 W/℃; (9)VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)： 6000 V; (10)dv/dt (1) Peak Diode Recovery voltage slope: 15 V/ns; (11)Tj Operating Junction Temperature, Tstg Storage Temperature: -55 to 150 ℃.

Features

STW26NM50 features: (1)TYPICAL RDS(on) = 0.10 Ω; (2)High dv/dt and avalanche capabilities; (3)Improved esd capability; (4)Low input capacitance and gate charge.

Diagrams

STW26NM50 simplified circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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STW26NM50
STMicroelectronics
MOSFET N-Ch 500 Volt 30 Amp
Data Sheet
0-1: $6.00
1-10: $5.17
10-100: $4.42
100-250: $4.06
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(USD)		 Quantity
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1-10: $3.73
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100-250: $2.81
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Data Sheet
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1-10: $3.08
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STW26NM60N
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Data Sheet
0-1: $2.18
1-10: $2.12
10-100: $1.93
100-250: $1.63
STW25NM60ND
STW25NM60ND
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Data Sheet
0-1: $4.91
1-10: $4.26
10-100: $3.66
100-250: $3.38
STW26NM50
STW26NM50
STMicroelectronics
MOSFET N-Ch 500 Volt 30 Amp
Data Sheet
0-1: $6.00
1-10: $5.17
10-100: $4.42
100-250: $4.06