Product Summary
The Si9933ADY P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). The applications of the Si9933ADY include Load switch, Motor drive, DC/DC conversion, Power management.
Parametrics
Si9933ADY absolute maximum ratings: (1)Drain-Source Voltage: –20 V; (2)VGSS Gate-Source Voltage: ±12 V; (3)ID Drain Current – Continuous: –3.4 A, Pulsed: –16 A; (4)Power Dissipation for Dual Operation: 2 W; (5)Power Dissipation for Single Operation: 1.6 W; (6)Operating and Storage Junction Temperature Range: –55 to +175 ℃.
Features
Si9933ADY features: (1)–5 A, –20 V, RDS(ON) = 75 mΩ @ VGS = –4.5 V, RDS(ON) = 105 mΩ @ VGS = –3.0 V, RDS(ON) = 115 mΩ @ VGS = –2.7 V; (2)Extended VGSS range (±12V) for battery applications; (3)Low gate charge; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
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![]() MOSFET SO8 DUAL PCH 30V |
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![]() Si9910DY-E1-E3 |
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![]() SI9910DY-E3 |
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