Product Summary
The 2N5322 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. The 2N5322 is especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary NPN types are respectively the 2N5320 and 2N5321.
Parametrics
2N5322 maximum ratings: (1)Collector-Base Voltage (IE = 0): -100 V; (2)VCEV Collector-Emitter Voltage (VBE = -1.5V): -100 V; (3)VCEO Collector-Emitter Voltage (IB = 0): -75V; (4)VEBO Emitter-Base Voltage (IC = 0): -6 V; (5)Collector Current: -1.2 A; (6)Collector Peak Current: -2 A; (7)Base Current: -1 A; (8)Total Dissipation at Tamb = 25℃: 1 W; (9)Ptot Total Dissipation at Tc = 25 ℃: 10 W; (10)Storage and Junction Temperature: -65 to 200 ℃.
Features
2N5322 features: (1)Silicon epitaxial planar PNP transistors; (2)medium power amplifier; (3)NPN Complements are 2N5320 and 2N532.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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2N5322 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP 75V 2A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
2N5301 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Hi-Pwr Amp |
Data Sheet |
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2N5302 |
ON Semiconductor |
Transistors Bipolar (BJT) 30A 60V 200W NPN |
Data Sheet |
Negotiable |
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2N5302G |
ON Semiconductor |
Transistors Bipolar (BJT) 30A 60V 200W NPN |
Data Sheet |
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2N5303 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Hi-Pwr Amp |
Data Sheet |
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2N5306 |
Central Semiconductor |
Transistors Darlington NPN Darl Amp |
Data Sheet |
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2N5306_D74Z |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
Negotiable |
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