Product Summary

2SJ92 Toshiba Power MOSFET uses the double-diffusion MOS (D-MOS) structure, which produces a high-withstand voltage, to form channels. This structure of 2SJ92 is especially well suited to high-withstad voltage and high-current device.

Parametrics

2SJ92 specifications: (1)Mounting area is identical with that of SOP-8; (2)On-resistance reduction and thin package (1.0 mm max )employing flat leads and Al straps; (3)Achieved high current and high power dissipation by attaching an exposed heat sink on the bottom of the package (ID= 40 A, PD = 45 W).

Features

2SJ92 features: (1)No carrier storage effect Superior frequency and switching characteristics; (2)Rugged without current concentration; (3)Low drive power due to voltage-controlling device; (4)Easy parallel connection.

Diagrams