Product Summary

The AOT430 is a N-Channel Enhancement Mode Field Effect Transistor. The AOT430 uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT430 is Pb-free (meets ROHS & Sony 259 specifications).

Parametrics

Absolute maximum ratings:(1)Drain-Source Voltage, VDS: 75V ; (2)Gate-Source Voltage, VGS: ±25V ; (3)Continuous Drain, TC=25°C, ID: 80A ; (4)Current G, TC=100°C: 78A ; (5)Pulsed Drain Current C, IDM: 200A ; (6)Avalanche Current C, IAR: 45A ; (7)Repetitive avalanche energy L=0.1mHC, EAR: 300MJ ; (8)Power Dissipation B, TC=25°C, PD: 268W ; (9)Power Dissipation B, TC=100°C,PD: 134W; (10)Junction and Storage Temperature Range, TJ, TSTG: -55 to 175°C.

Features

Features:(1)VDS (V) = 75V; (2)ID = 80 A (VGS = 10V); (3)RDS(ON) < 11.5mΩ (VGS = 10V).

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AOT430
AOT430

MOSFET N-CH 75V 80A TO-220
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AOT404
AOT404

MOSFET N-CH 105V 40A TO-220
Data Sheet
Negotiable 
AOT410L
AOT410L

MOSFET N-CH 100V 150A TO-220
Data Sheet
0-1: $1.40
1-25: $1.13
25-100: $1.01
100-250: $0.90
250-500: $0.79
500-1000: $0.65
1000-2500: $0.61
2500-5000: $0.59
5000-10000: $0.56
AOT416
AOT416

MOSFET N-CH 100V 42A TO-220
Data Sheet
0-1: $0.58
1-25: $0.45
25-100: $0.39
100-250: $0.34
250-500: $0.29
500-1000: $0.23
1000-2500: $0.21
2500-5000: $0.19
5000-10000: $0.19
AOT418L
AOT418L

MOSFET N-CH 100V 9.5A TO220
Data Sheet
0-1000: $0.60
AOT424
AOT424

MOSFET N-CH 30V 110A TO220
Data Sheet
0-1000: $0.34
AOT426
AOT426
Other

Data Sheet
Negotiable