(Hong Kong)
Product Summary
The MRF377H is RF power field-effect transistor, which is N-channel enhancement mode lateral MOSFET. It is designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 32 volt digital television transmitter equipment.
Parametrics
Absolute maximum ratings: (1)Drain-Source Voltage, VDSS: - 0.5 to +65Vdc; (2)Gate-Source Voltage, VGS: - 0.5 to +15Vdc; (3)Drain Current - Continuous, ID: 17Adc; (4)Total Device Dissipation at TC = 25℃, PD: 648W; (5)Total Device Dissipation Derate above 25℃, 3.7W/℃; (6)Storage Temperature Range, Tstg: -65 to +150℃; (7)Case Operating Temperature, TC: 150℃; (8)Operating Junction Temperature, TJ: 200℃; (9)CW Operation at TC = 25℃, CW: 235W; (10)CW Operation Derate above 25℃, CW: 1.38W/℃.
Features
Features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Device Designed for Push-Pull Operation Only; (4)Integrated ESD Protection; (5)Excellent Thermal Stability; (6)Lower Thermal Resistance Package; (7)Low Gold Plating Thickness on Leads, 40μ Nominal.; (8)RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 MRF377H |
Other |
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Data Sheet |
Negotiable |
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MRF377HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power 250W 860MHZ 32V |
Data Sheet |
Negotiable |
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MRF377HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 250W 860MHZ 32V |
Data Sheet |
Negotiable |
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