Product Summary

The KM416C256DJ-6 is a 262,144 x 16 bit Fast Page Mode CMOS DRAM. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), access time (-5,-6,-7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of the KM416C256DJ-6. The device has CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. The KM416C256DJ-6 is fabricated using Samsung’s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

Parametrics

KM416C256DJ-6 absolute maximum ratings: (1)Voltage on any pin relative to VSS, VIN,VOUT: -0.5 to +4.6V; (2)Voltage on VCC supply relative to VSS, VCC: -0.5 to +4.6V; (3)Storage Temperature, Tstg: -55 to +150℃; (4)Power Dissipation, PD: 1 W; (5)Short Circuit Output Current, IOS: 50 mA.

Features

KM416C256DJ-6 features: (1)Fast Page Mode operation; (2)2 CAS Byte/Wrod Read/Write operation; (3)CAS-before-RAS refresh capability; (4)RAS-only and Hidden refresh capability; (5)Self-refresh capability (L-ver only); (6)TTL(5V)/LVTTL(3.3V) compatible inputs and outputs; (7)Early Write or output enable controlled write; (8)JEDEC Standard pinout; (9)Available in 40-pin SOJ 400mil and44(40)-pin TSOP(II) 400mil packages; (10)riple +5V??10% power supply(5V product); (11)Triple +3.3V??0.3V power supply(3.3V product).

Diagrams

KM416C256DJ-6 functional block diagram

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