Product Summary

The MJE180 is a silicon power transistor. It is designed for low power audio amplifier and low current, high speed switching applications.

Parametrics

MJE180 absolute maximum ratings: (1)Collector-Base Voltage VCB: 60Vdc; (2)Collector-Emitter Voltage VCEO: 40Vdc; (3)Emitter-Base Voltage VEB: 7.0Vdc; (4)Collector Current - Continuous IC: 3.0Adc; - Peak IC: 6.0Adc; (5)Base Current IB: 1.0Adc; (6)Total Power Dissipation @ TC = 25℃ PD: 1.5W;Derate above 25℃ PD: 0.012W/℃; (7)Total Power Dissipation @ TA = 25℃ PD: 12.5W;Derate above 25℃ PD: 0.1W/℃; (8)Operating and Storage Junction Temperature Range TJ, Tstg: -65 to +150℃.

Features

MJE180 features: (1)Collector-Emitter Sustaining Voltage -VCEO(sus) = 40 Vdc; (2)DC Current Gain -hFE = 30 (Min) @ IC = 0.5 Adc; hFE = 12 (Min) @ IC = 1.5 Adc; (3)Current-Gain - Bandwidth Product -fT = 50 MHz (Min) @ IC = 100 mAdc; (4)Annular Construction for Low Leakages -ICBO = 100 nA (Max) @ Rated VCB; (5)Epoxy Meets UL 94 V-0 @ 0.125 in; (6)ESD Ratings: Machine Model, C Human Body Model, 3B; (7)Pb-Free Packages are Available.

Diagrams

MJE180 marking diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJE18004D2
MJE18004D2
ON Semiconductor
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Data Sheet
Negotiable 
MJE18004D2G
MJE18004D2G
ON Semiconductor
Transistors Bipolar (BJT) 5A 1000V 75W NPN
Data Sheet
Negotiable 
MJE18006
MJE18006
ON Semiconductor
Transistors Bipolar (BJT) 6A 450V 100W NPN
Data Sheet
Negotiable 
MJE18006G
MJE18006G
ON Semiconductor
Transistors Bipolar (BJT) BIP NPN 8A 450V
Data Sheet
Negotiable 
MJE18008G
MJE18008G
ON Semiconductor
Transistors Bipolar (BJT) 8A 450V 125W NPN
Data Sheet
0-1: $0.89
1-25: $0.71
25-100: $0.57
100-500: $0.50
MJE18004
MJE18004
ON Semiconductor
Transistors Bipolar (BJT) 5A 1000V 75W NPN
Data Sheet
Negotiable 
MJE18002G
MJE18002G
ON Semiconductor
Transistors Bipolar (BJT) 2A 450V 40W NPN
Data Sheet
Negotiable 
MJE18002D2
MJE18002D2
Other

Data Sheet
Negotiable