Product Summary
The SD1490 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in UHF and Band IV, V television transmitters and transposers.
Parametrics
SD1490 absolute maximum ratings: (1)VCBO Collector-Base Voltage: 45 V; (2)VCEO Collector-Emitter Voltage: 30 V; (3)VEBO Emitter-Base Voltage: 3.0 V; (4)IC Device Current: 8 A; (5)PDISS Power Dissipation: 135 W; (6)TJ Junction Temperature: +200 ℃; (7)TSTG Storage Temperature: - 50 to +150 ℃.
Features
SD1490 features: (1)470 - 860 MHz; (2)28 VOLTS; (3)class a push pull; (4)designed for high power linear operation; (5)high saturated power capability; (6)gold metallization; (7)diffused emitter ballast resistors; (8)common emitter configuration; (9)internal input matching; (10)pout = 25 w min. with 9.0 db gain.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SD1490 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
SD1400 |
Other |
Data Sheet |
Negotiable |
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SD1400A |
Other |
Data Sheet |
Negotiable |
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SD1405 |
STMicroelectronics |
Transistors RF Bipolar Power NPN 12.5V 30MHz |
Data Sheet |
Negotiable |
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SD1407 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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SD1407-16 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN 28.0V 30MHz |
Data Sheet |
Negotiable |
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SD1409 |
Other |
Data Sheet |
Negotiable |
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