(Hong Kong)
Product Summary
The SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. The applications of the SHF-0289 include: Analog and Digital Wireless Systems; 3G, Cellular, PCS; Fixed Wireless, Pager Systems.
Parametrics
SHF-0289 absolute maximum ratings: (1)Drain Current IDS: 400 mA; (2)Forward Gate Current IGSF: 2.4 mA; (3)Reverse Gate Current IGSR: 2.4 mA; (4)Drain-to-Source Voltage VDS: +9.0 V; (5)Gate-to-Source Voltage VGS: <-5 or >0 V; (6)RF Input Power PIN: 400 mW; (7)Storage Temperature Range Tstor: -40 to +165 ℃; (8)Channel Temperature TJ: +165 ℃.
Features
SHF-0289 features: (1)Now available in Lead Free, RoHS Compliant, & Green Packaging; (2)High Linearity Performance at 1.96 GHz: +30 dBm P1dB; +43 dBm OIP3; +23.7 dBm IS-95 Channel Power; +14.6 dB Gain; (3)+21.7 dBm W-CDMA Channel Power; (4)High Drain Efficiency (>50% at P1dB).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SHF-0289 |
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IC HFET ALGAAS/GAAS 1W SOT-89 |
Data Sheet |
Negotiable |
|
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 |
SHF-0289(Z) |
Other |
|
Data Sheet |
Negotiable |
|
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|
SHF-0289Z |
|
IC HFET ALGAAS/GAAS 1W SOT-89 |
Data Sheet |
Negotiable |
|
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