(Hong Kong)
Product Summary
The 2SK272 is a N-Channel MOS Field Effect Transistor designed for high current switching spplications.
Parametrics
2SK272 absolute maxing ratings: (1)Drain to Source Voltage VDSS: 6 V; (2)Gate to Source Voltage VGSS: ±20 V; (3)Drain Current (DC) ID (DC): ±25 A; (4)Drain Current (pulse)* ID (pulse): ±100 A; (5)Total Power Dissipation (TA = 25℃) PT: 2.0 W; (6)Total Power Dissipation (Tc = 25 ℃) PT: 25 W; (7)Channel Temperature Tch: 150℃; (8)Storage Temperature Tstg: -55 to +150℃.
Features
2SK272 features: (1)Low On-Resistance: RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A); RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A); (2)Low Ciss Ciss = 830 pF Typ.; (3)Built-in G-S Protection Diode; (4)Isolated TO-220 Package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SK2723 |
Other |
|
Data Sheet |
Negotiable |
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2SK2724 |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SK2725 |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SK2726 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SK2727 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SK2728 |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SK2729 |
Other |
|
Data Sheet |
Negotiable |
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