Product Summary

This N-Channel 2.5V specified MOSFET FDC637AN is produced using dvanced PowerTrench process of Fairchild Semiconductor a that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. The FDC637AN has been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. The applications of it include: (1)DC/DC converter; (2)Load switch; (3)Battery Protection.

Parametrics

FDC637AN absolute maxing ratings: (1)VDSS Drain-Source Voltage: 20 V; (2)VGSS Gate-Source Voltage: ±8 V; (3)ID Drain Current - Continuous: 6.2 A; Drain Current - Pulsed 20 A; (4)PD Power Dissipation for Single Operation: 1.6 W/0.8 W; (5)TJ, Tstg Operating and Storage Junction Temperature Range: -55 to +150℃.

Features

FDC637AN features: (1)6.2 A, 20 V. RDS(on) = 0.024Ω@ VGS = 4.5 V; RDS(on) = 0.032Ω@ VGS = 2.5 V; (2)Fast switching speed; (3)Low gate charge (10.5nC typical); (4)High performance trench technology for extremely low RDS(ON); (5)SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDC637AN
FDC637AN
Fairchild Semiconductor
MOSFET SSOT-6 N-CH 20V
Data Sheet
0-1: $0.41
1-25: $0.32
25-100: $0.27
100-250: $0.24
FDC637AN_F095
FDC637AN_F095
Fairchild Semiconductor
MOSFET 2.5V N-CH POWERTRENCH
Data Sheet
Negotiable