(Hong Kong)
Product Summary
The MG20G6EL1 is a silicon NPN triple diffused type.
Parametrics
MG20G6EL1 absolute maximum ratings: (1)Collector-base voltage VCBO: 600V; (2)Collector-emitter sustaining voltage VCEX(SUS): 600V; (3)Collector-emitter sustaining voltage VCEO(SUS): 450V; (4)Emitter-base voltage VEBO: 6V; (5)Base current IB: 2A; (6)Collector power dissipation(TC=25℃) PC: 125W; (7)Junction temperature Tj: 150; (8)Storage temperature range Tstg: -40~125; (9)Isolation voltage VIsol 2500(AC 1 Minute)V; (10)Screw torque: 30kg.cm.
Features
MG20G6EL1 features: (1)The collector is isolated form case; (2)4 or 6 darlington transistors including free wheeling diodes are built-in to 1 package; (3)High DC current gain: hFE=100(min)(IC=20A); (4)Low satulation voltage: VCE(sat)=2V(max)(IC=20A).
Diagrams
 |
 MG2000 |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
MG2001 |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
MG2002 |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
MG2004 |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
MG200J6ES60 |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
MG200J6ES61 |
|
IGBT MOD CMPCT 600V 200A |
Data Sheet |
|
|
||||||
