Product Summary
The MJ12002 is isc silicon NPN power transistor. The applications of it include: designed for use in large screen color deflection circuits.
Parametrics
MJ12002 absolute maxing ratings: (1)VCEX Collector-Emitter Voltage: 1500V; (2)VCEO(SUS) Collector-Emitter Voltage: 750V; (3)VEBO Emitter-Base Voltage: 5V; (4)IC Collector Current-Continuous: 2.5A; (5)IBB Base Current-Continuous: 2A; (6)IE Emitter Current-Continuous: 4.5A; (7)PC Collector Power Dissipation@TC=25℃: 75W; (8)TJ Junction Temperature: 150℃; (9)Tstg Storage Temperature: -65~150℃.
Features
MJ12002 features: (1)Collector-emitter voltage-VCEX=1500V; (2)Forward bias safe Safe Operation Area; (3)Switching time with inductive load.
Diagrams
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