Product Summary

The MJ12002 is isc silicon NPN power transistor. The applications of it include: designed for use in large screen color deflection circuits.

Parametrics

MJ12002 absolute maxing ratings: (1)VCEX Collector-Emitter Voltage: 1500V; (2)VCEO(SUS) Collector-Emitter Voltage: 750V; (3)VEBO Emitter-Base Voltage: 5V; (4)IC Collector Current-Continuous: 2.5A; (5)IBB Base Current-Continuous: 2A; (6)IE Emitter Current-Continuous: 4.5A; (7)PC Collector Power Dissipation@TC=25℃: 75W; (8)TJ Junction Temperature: 150℃; (9)Tstg Storage Temperature: -65~150℃.

Features

MJ12002 features: (1)Collector-emitter voltage-VCEX=1500V; (2)Forward bias safe Safe Operation Area; (3)Switching time with inductive load.

Diagrams

<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/2012971138519.jpg">

MJ12003
MJ12003

Other


Data Sheet

Negotiable 
MJ12005
MJ12005

Other


Data Sheet

Negotiable 
MJ12005D
MJ12005D

Other


Data Sheet

Negotiable 
MJ12020
MJ12020

Other


Data Sheet

Negotiable 
MJ12021
MJ12021

Other


Data Sheet

Negotiable 
MJ12022
MJ12022

Other


Data Sheet

Negotiable