(Hong Kong)
Product Summary
The 2N2857 is the silicon NPN transistor, which is designed for UHF equipment. Applications of the 2N2857 include low noise amplifier, oscillator, and mixer.
Parametrics
2N2857 maximum ratings: (1)Collector-Emitter Voltage: VCEO= 15 V; (2)Collector-Base Voltage: VCBO= 30 V; (3)Emitter-Base Voltage: VEBO= 3.0 V; (4)Collector Current, Continuous: IC= 40 mA; (5)Operating Junction Temperature: -65 to +200 ℃; (6)Storage Temperature: TSTG= -65 to +200℃.
Features
2N2857 features: (1)Low power, ultra-high frequency transistor; (2)Housed in TO-72 case.; (3)Also available in chip form using the 0011 chip geometry.; (4)The Min and Max limits shown are per MIL-PRF-19500/343 which Semicoa meets in all cases.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 2N2857 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN VHF/UHF AM |
Data Sheet |
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2N2857CSM |
Other |
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Data Sheet |
Negotiable |
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2N2857UB |
Other |
|
Data Sheet |
Negotiable |
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2N2857UB_1356743 |
Other |
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Data Sheet |
Negotiable |
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